This study reports the electrical properties of Al-omic/Graphene (F3O4) devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the device's surface or interface state distribution. Some basic diode parameters such as ideality factor (n), barrier height (Fb) and series resistance (Rs) were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.
Birincil Dil | İngilizce |
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Konular | Birinci Basamak Sağlık Hizmetleri |
Bölüm | Research Articles |
Yazarlar | |
Yayımlanma Tarihi | 28 Mart 2023 |
Yayımlandığı Sayı | Yıl 2023 Cilt: 2 Sayı: 1 |